bta16, btb16 t1610, t1635 16 a snubberless?, logic level and standard triacs features medium current triac low thermal resistance with clip bonding low thermal resistance insulation ceramic for insulated bta high commutation (4q) or very high commutation (3q) capability bta series ul1557 certified (file ref: 81734) rohs ( 2002/95/ec) compliant insulated tab (bta series, rated at 2500 v rms ) applications snubberless versions (bta/btb...w and t1635) especially recommended for use on inductive loads, because of their high commutation performances on/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers description available either in through-hole or surface-mount packages, the bta16, btb16, t1610 and t1635 triacs series are suitable for general purpose mains power ac switching. tm : snubberless is a trademark of stmicroelectronics a2 a1 g d 2 pa k t1610g t1635g to-220ab insulated bta16 to-220ab btb16 table 1. device summary symbol parameter bta16 (1) 1. insulated btb16 t1610 t1635 i t(rms) on-state rms current 16 16 16 16 v drm /v rrm repetitive peak off-state voltage 600/800 600/800 600/800 600/800 i gt (snubberless) triggering gate current 35/50 35/50 - 35 i gt (logic level) triggering gate current 10 10 10 - i gt (standard) triggering gate current 25/50 25/50 - - 2014-6-9 1 www.kersemi.com
table 2. absolute maximum ratings symbol parameter value unit i t(rms) on-state rms current (full sine wave) d 2 pak / to-220ab t c = 100 c 16 a to-220ab insulated t c = 86 c i tsm non repetitive surge peak on-state current (full cycle, t j initial = 25 c) f = 50 hz t = 20 ms 160 a f = 60 hz t = 16.7 ms 168 i 2 ti 2 t value for fusing t p = 10 ms 144 a 2 s di/dt critical rate of rise of on-state current i g = 2 x i gt , t r 100 ns f = 120 hz t j = 125 c 50 a/s v dsm / v rsm non repetitive surge peak off-state voltage t p = 10 ms t j = 25 c v drm /v rrm + 100 v i gm peak gate current t p = 20 s t j = 125 c 4 a p g(av) average gate power dissipation t j = 125 c 1 w t stg storage temperature range -40 to + 150 t j maximum operating junction temperature -40 to + 125 table 3. electrical characteristics (t j = 25 c, unless otherwise specified) snubberless and logic level (3 quadrants) symbol test conditions quadrant t1610 t1635 bta16 / btb16 unit sw cw bw i gt (1) 1. minimum igt is guaranted at 5% of i gt max v d = 12 v r l = 33 i - ii - iii max. 10 35 10 35 50 ma v gt i - ii - iii max. 1.3 v v gd v d = v drm r l = 3.3 k t j = 125 c i - ii - iii min. 0.2 v i h (2) 2. for both polarities of a2 referenced to a1 i t = 500 ma max. 15 35 15 35 50 ma i l i g = 1.2 i gt i - iii max. 25 50 25 50 70 ma ii 30 60 30 60 80 dv/dt (2) v d = 67 %v drm gate open t j = 125 c min. 40 500 40 500 1000 v/s (di/dt)c (2) (dv/dt)c = 0.1 v/s t j = 125 c min. 8.5 - 8.5 - - a/ms (dv/dt)c = 10 v/s t j = 125 c 3.0 - 3.0 - - without snubber t j = 125 c - 8.5 - 8.5 14 bta16, btb16 t1610, t1635 2014-6-9 2 www.kersemi.com
table 4. electrical characteristics (t j = 25 c, unless otherwise specified) standard (4 quadrants) symbol test conditions quadrant bta16 / btb16 unit cb i gt (1) 1. minimum igt is guaranted at 5% of i gt max v d = 12 v r l = 33 i - ii - iii iv max. 25 50 50 100 ma v gt all max. 1.3 v v gd v d = v drm r l = 3.3 k t j = 125 c all min. 0.2 v i h (2) 2. for both polarities of a2 referenced to a1 i t = 500 ma max. 25 50 ma i l i g = 1.2 i gt i - iii - iv max. 40 60 ma ii 80 120 dv/dt (2) v d = 67 %v drm gate open t j = 125 c min. 200 400 v/s (dv/dt)c (2) (di/dt)c = 7 a/ms t j = 125 c min. 5 10 v/s table 5. static characteristics symbol test conditions value unit v t (2) i tm = 22.5 a t p = 380 s t j = 25 c max. 1.55 v v to (2) threshold voltage t j = 125 c max. 0.85 v r d (2) dynamic resistance t j = 125 c max. 25 m i drm i rrm v drm = v rrm t j = 25 c max. 5a t j = 125 c 2 ma table 6. thermal resistance symbol parameter value unit r th(j-c) junction to case (ac) d 2 pak / to-220ab 1.2 c/w to-220ab insulated 2.1 r th(j-a) junction to ambient s (1) = 1 cm 2 1. s = copper surface under tab d 2 pa k 4 5 c/w to-220ab / to-220ab insulated 60 bta16, btb16 t1610, t1635 2014-6-9 3 www.kersemi.com
figure 1. maximum power dissipation versus on-state rms current (full cycle) figure 2. on-state rms current versus case temperature (full cycle) 0246810121416 0 2 4 6 8 10 12 14 16 18 20 p(w) i (a) t(rms) 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 i (a) t(rms) t (c) c bta btb / t16 figure 3. on-state rms current versus ambient temperature (full cycle) figure 4. relative variation of thermal impedance versus pulse duration 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i (a) t(rms) t (c) c dpak (s=1cm ) 2 2 printed circuit board fr4, copper thickn ess: 35 m 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 1e-2 1e-1 1e+0 k=[z /r th th ] t (s) p z th(j-c) z th(j-a) figure 5. on-state characteristics (maximum values) figure 6. surge peak on-state current versus number of cycles 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 200 i (a) tm v (v) tm t max. v = 0.85v r = 25 m j to d t= j t max. j t = 25c j . 1 10 100 1000 0 20 40 60 80 100 120 140 160 180 i (a) tsm number of cycles t=20ms one cycle non repetitive t initial=25c j repetitive t =85c c bta16, btb16 t1610, t1635 2014-6-9 4 www.kersemi.com
figure 11. d 2 pak thermal resistance junction to ambient versus copper surface under tab (printed circuit board fr4, copper thickness: 35 m) figure 7. non-repetitive surge peak on-state current for a sinusoidal figure 8. relative variation of gate trigger current 0.01 0.10 1.00 10.00 100 1000 3000 i (a), i t (a s) tsm 22 t (ms) p t initial=25c j i tsm di/dt limitation: 50a/s i t 2 pulse with width t < 10 ms and corresponding value of i t p 2 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 t (c) j i,i,i[t] / gthl j i ,i ,i [t =25c] gthl j i gt i h & i l holding current and latching current versus junction temperature (typical values) figure 9. relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values) figure 10. relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values) 0.1 1.0 10.0 100.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dv/dt)c (v/s) (di/dt)c [(dv/dt)c] / specified (di/dt)c t1635/cw/bw sw c b snubberless and logic level types 0 25 50 75 100 125 0 1 2 3 4 5 6 (di/dt)c [t ] / pecified] j (di/dt)c [t s j t (c) j standard types 0 4 8 1216202428323640 0 10 20 30 40 50 60 70 80 s(cm2) r (c/w) th(j-a) dpak 2 bta16, btb16 t1610, t1635 2014-6-9 5 www.kersemi.com
figure 12. ordering information scheme (bta16 and btb16 series) figure 13. ordering information scheme (t16 series) table 7. product selector device (1) 1. btb: non insulated to-220ab package voltage (xxx) sensitivity type package 600 v 800 v bta/btb16-xxxb x x 50 ma standard to-220ab bta/btb16-xxxbw x x 50 ma snubberless to-220ab bta/btb16-xxxc x 25 ma standard to-220ab bta/btb16-xxxcw x x 35 ma snubberless to-220ab bta/btb16-xxxsw x x 10 ma logic level to-220ab t1610-xxxg x x 10 ma logic level d 2 pa k t1635-xxxg x x 35 ma snubberless d 2 pa k triac series insulation current voltage sensitivity and type packing mode a = insulated b = non insulated 16 = 16 a 600 = 600 v 800 = 800 v b = 50 ma standard bw = 50 ma snubberless c = 25 ma standard cw = 35 ma rg = tube snubberless sw = 10 ma logic level bt a 16 - 600 bw rg t 16 35 - 600 g (-tr) triac series sensitivity voltage package packing mode current 16 = 16 a 35 = 35 ma 10 = 10 ma 600 = 600 v 800 = 800 v g = d pak blank = tube -tr = tape and reel 2 bta16, btb16 t1610, t1635 2014-6-9 6 www.kersemi.com
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